YQ5LAM10E Series

Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD

Catalog

Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD

Part	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction	Current - Average Rectified (Io)	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor YQ5LAM10ETR	Schottky	50 µA	Surface Mount	175 °C	5 A	200 mA 500 ns	PMDTM	610 mV	200 pF	SOD-128	100 V

Catalog

Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD

Description

The YQ5LAM10E is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.