FDS6685-NBCM003A

Obsolete

ON Semiconductor

P-CHANNEL POWERTRENCH® MOSFET -30V, -8.8A, 20MΩ

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS6685-NBCM003A

Obsolete

ON Semiconductor

P-CHANNEL POWERTRENCH® MOSFET -30V, -8.8A, 20MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6685-NBCM003A

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1604 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

FDS6685 Series

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id
ON Semiconductor FDS6685-NBCM003A	1604 pF	30 V	Surface Mount	20 mOhm	8-SOIC	25 V	P-Channel	8.8 A	4.5 V 10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	24 nC	1 W	8-SOIC	3.9 mm	0.154 in	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1000	$ 0.82

Description

General part information

FDS6685 Series

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).