Discrete Semiconductor Products

SCTW90N65G2V

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 119 A, 18 MOHM (TYP., TJ = 25 C) IN AN HIP247 PACKAGE

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DocumentsProduct Change Notice EN +25

Discrete Semiconductor Products

SCTW90N65G2V

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 119 A, 18 MOHM (TYP., TJ = 25 C) IN AN HIP247 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN +25

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTW90N65G2V

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	157 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-3
Power Dissipation (Max)	390 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	HiP247™
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5 V

SCTW90N65G2V Series

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics SCTW90N65G2V	HiP247™	3300 pF	18 V	390 W	25 mOhm	Through Hole	5 V	TO-247-3	22 V	-10 V	90 A	N-Channel	650 V	200 °C	-55 ░C	157 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 28.19
Newark	Each	1	$ 36.32
		5	$ 35.43
		10	$ 34.58
		25	$ 34.02
		50	$ 33.71
		100	$ 33.51
		250	$ 33.32

Description

General part information

SCTW90N65G2V Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.