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SG6858TZ
Discrete Semiconductor Products

FDC6561AN

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, LOGIC LEVEL, 30V, 2.5A, 95MΩ

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SG6858TZ
Discrete Semiconductor Products

FDC6561AN

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, LOGIC LEVEL, 30V, 2.5A, 95MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC6561AN
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.2 nC
Input Capacitance (Ciss) (Max) @ Vds220 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs95 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.66
10$ 0.56
100$ 0.39
500$ 0.31
1000$ 0.25
Digi-Reel® 1$ 0.66
10$ 0.56
100$ 0.39
500$ 0.31
1000$ 0.25
Tape & Reel (TR) 3000$ 0.22
6000$ 0.21
9000$ 0.20
30000$ 0.19
NewarkEach (Supplied on Full Reel) 3000$ 0.23
6000$ 0.22
12000$ 0.22
18000$ 0.21
30000$ 0.21
ON SemiconductorN/A 1$ 0.20

Description

General part information

FDC6561AN Series

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.