FDC6561AN Series

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

Part	Drain to Source Voltage (Vdss)	FET Feature	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	Configuration	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDC6561AN	30 V	Logic Level Gate	95 mOhm	MOSFET (Metal Oxide)	SuperSOT™-6	3 V	700 mW	SOT-23-6 Thin TSOT-23-6	2 N-Channel (Dual)	Surface Mount	-55 °C	150 °C	220 pF	3.2 nC

Catalog

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

Key Features

• 2.5 A, 30 V

• RDS(ON)= 0.095 Ω @ VGS= 10 V

• RDS(ON)= 0.145 Ω @ VGS= 4.5 V

• Very fast switching

• Low gate charge (2.1nC typical

• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Description

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.