Discrete Semiconductor Products

MPSA06RA

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 500 MA, 625 MW, TO-226AA, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +2

Discrete Semiconductor Products

MPSA06RA

Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 500 MA, 625 MW, TO-226AA, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA06RA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

MPSA06(LEGACY%20FAIRCHILD) Series

500 mA, 80 V NPN Small Signal Bipolar Junction Transistor

Part	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package
ON Semiconductor MPSA06	TO-226-3 TO-92-3	TO-92-3	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW
ON Semiconductor MPSA06	TO-226-3 TO-92-3	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW
ON Semiconductor MPSA06RLRPG	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW	TO-226
ON Semiconductor MPSA06RL	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW	TO-226
ON Semiconductor MPSA06RLRAG	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW	TO-226
ON Semiconductor MPSA06RA	TO-226-3 TO-92-3	TO-92-3	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW
ON Semiconductor MPSA06_D27Z	TO-226-3 TO-92-3	TO-92-3	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.48
		10	$ 0.30
		100	$ 0.19
		500	$ 0.14
		1000	$ 0.13
	Tape & Reel (TR)	2000	$ 0.11
		4000	$ 0.10
		6000	$ 0.10
		10000	$ 0.09
		14000	$ 0.09
		20000	$ 0.08
		50000	$ 0.07
		100000	$ 0.07
Newark	Each (Supplied on Cut Tape)	1000	$ 0.14

Description

General part information

MPSA06(LEGACY%20FAIRCHILD) Series

This 500 mA, 80 V NPN Small Signal Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.Replacement Part Number:MPSA06

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed

Package Drawing