MPSA06(LEGACY%20FAIRCHILD) Series

500 mA, 80 V NPN Small Signal Bipolar Junction Transistor

Catalog

500 mA, 80 V NPN Small Signal Bipolar Junction Transistor

Part	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package
ON Semiconductor MPSA06	TO-226-3 TO-92-3	TO-92-3	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW
ON Semiconductor MPSA06	TO-226-3 TO-92-3	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW
ON Semiconductor MPSA06RLRPG	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW	TO-226
ON Semiconductor MPSA06RL	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW	TO-226
ON Semiconductor MPSA06RLRAG	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW	TO-226
ON Semiconductor MPSA06RA	TO-226-3 TO-92-3	TO-92-3	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW
ON Semiconductor MPSA06_D27Z	TO-226-3 TO-92-3	TO-92-3	100 hFE	80 V	NPN	Through Hole	250 mV	500 mA	100 nA	100 MHz	-55 °C	150 °C	625 mW

Catalog

500 mA, 80 V NPN Small Signal Bipolar Junction Transistor

Key Features

• Pb-Free Packages are Available

Description

This 500 mA, 80 V NPN Small Signal Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.Replacement Part Number:MPSA06