Integrated Circuits (ICs)

IR2101SPBF

Obsolete

INFINEON

GATE DRIVERS HI LO SIDE DRVR 600V 130MA 50NS

Deep-Dive with AI

Search across all available documentation for this part.

Integrated Circuits (ICs)

IR2101SPBF

Obsolete

INFINEON

GATE DRIVERS HI LO SIDE DRVR 600V 130MA 50NS

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2101SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	210 mA
Current - Peak Output (Source, Sink) [custom]	360 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ)	100 ns, 50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2101 Series

Part	Gate Type	Driven Configuration	Input Type	Number of Drivers	Channel Type	Logic Voltage - VIL, VIH	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Package / Case
INFINEON IR2101STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-SOIC	600 V	210 mA	360 mA	Surface Mount	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm
INFINEON IR2101PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-PDIP	600 V	210 mA	360 mA	Through Hole	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C		8-DIP (0.300" 7.62mm)
INFINEON IR2101PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-PDIP	600 V	210 mA	360 mA	Through Hole	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C		8-DIP (0.300" 7.62mm)
INFINEON IR2101S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-SOIC	600 V	210 mA	360 mA	Surface Mount	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm
INFINEON IR2101	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-PDIP	600 V	210 mA	360 mA	Through Hole	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C		8-DIP (0.300" 7.62mm)
INFINEON IR2101SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-SOIC	600 V	210 mA	360 mA	Surface Mount	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2221	$ 2.33
	Tube	1	$ 3.56
		10	$ 2.33
		95	$ 1.66
		190	$ 1.52
		285	$ 1.45
		570	$ 1.35
		1045	$ 1.27
		2565	$ 1.18
Mouser	N/A	1	$ 2.33
		10	$ 1.73
		25	$ 1.42
		100	$ 1.36
		250	$ 1.33
		500	$ 1.28
		1000	$ 1.24
		2500	$ 1.20
		3800	$ 1.10

Description

General part information

IR2101 Series

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Documents

Technical documentation and resources

No documents available