IR2101 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Driven Configuration	Input Type	Number of Drivers	Channel Type	Logic Voltage - VIL, VIH	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Package / Case
INFINEON IR2101STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-SOIC	600 V	210 mA	360 mA	Surface Mount	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm
INFINEON IR2101PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-PDIP	600 V	210 mA	360 mA	Through Hole	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C		8-DIP (0.300" 7.62mm)
INFINEON IR2101PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-PDIP	600 V	210 mA	360 mA	Through Hole	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C		8-DIP (0.300" 7.62mm)
INFINEON IR2101S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-SOIC	600 V	210 mA	360 mA	Surface Mount	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm
INFINEON IR2101	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-PDIP	600 V	210 mA	360 mA	Through Hole	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C		8-DIP (0.300" 7.62mm)
INFINEON IR2101SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Half-Bridge	Non-Inverting	2	Independent	0.8 V 3 V	8-SOIC	600 V	210 mA	360 mA	Surface Mount	20 V	10 VDC	50 ns 100 ns	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm