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SOT-23-3
Discrete Semiconductor Products

SQ2361EES-T1-GE3

Obsolete

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DocumentsDatasheet
SOT-23-3
Discrete Semiconductor Products

SQ2361EES-T1-GE3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQ2361EES-T1-GE3
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds545 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)2 W
Rds On (Max) @ Id, Vgs150 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SQ2361 Series

P-Channel 60 V 2.5A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources