SQ2361 Series

Catalog

MOSFET P-CH 60V 2.5A SOT23-3

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification
Vishay General Semiconductor - Diodes Division SQ2361EES-T1-GE3	545 pF	150 mOhm	Surface Mount	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V	17 nC	2.5 A	60 V	2 W	P-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SQ2361ES-T1_GE3	550 pF	177 mOhm	Surface Mount	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		2.8 A	60 V	2 W	P-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)		10 V	12 nC	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division SQ2361AEES-T1_BE3	620 pF	170 mOhm	Surface Mount	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		2.8 A	60 V	2 W	P-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	4.5 V 10 V		Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division SQ2361ES-T1_BE3	550 pF	177 mOhm	Surface Mount	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		2.8 A	60 V	2 W	P-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	4.5 V 10 V	12 nC	Automotive	AEC-Q101