Discrete Semiconductor Products

AOV11S60

NRND

MOSFET N-CH 600V 650MA/8A 4DFN

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFET N-CH 600V 650MA/8A 4DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AOV11S60

Current - Continuous Drain (Id) @ 25°C	650 mA, 8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	8.3 W
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	4-DFN (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

Part	Supplier Device Package	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Alpha & Omega Semiconductor Inc. AOV11S60	4-DFN (8x8)	Surface Mount	N-Channel	500 mOhm	4-PowerTSFN	MOSFET (Metal Oxide)	4.1 V	8 A 650 mA	8.3 W	156 W	30 V	11 nC	600 V	10 V	545 pF	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 650mA (Ta), 8A (Tc) 8.3W (Ta), 156W (Tc) Surface Mount 4-DFN (8x8)

Technical documentation and resources