Discrete Semiconductor Products

SIHJ8N60E-T1-GE3

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MOSFET N-CH 600V 8A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 600V 8A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHJ8N60E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	754 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Rds On (Max) @ Id, Vgs	520 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIHJ8N60E-T1-GE3	PowerPAK® SO-8	44 nC	PowerPAK® SO-8	30 V	Surface Mount	520 mOhm	N-Channel	10 V	MOSFET (Metal Oxide)	4 V	8 A	754 pF	-55 °C	150 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources