SIHJ8 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 8A PPAK SO-8
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | 44 nC | PowerPAK® SO-8 | 30 V | Surface Mount | 520 mOhm | N-Channel | 10 V | MOSFET (Metal Oxide) | 4 V | 8 A | 754 pF | -55 °C | 150 °C | 600 V |