Trans MOSFET P-CH 20V 0.5A 3-Pin SOT-883 T/R

Discrete Semiconductor Products

PMZ950UPEYL

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TRANSISTOR: P-MOSFET; TRENCH; UNIPOLAR; -20V; -300MA; IDM: -2A; ESD

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DocumentsPMZ950UPEYL | Datasheet plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body +13

Discrete Semiconductor Products

PMZ950UPEYL

Active

Nexperia USA Inc.

TRANSISTOR: P-MOSFET; TRENCH; UNIPOLAR; -20V; -300MA; IDM: -2A; ESD

Deep-Dive with AI

DocumentsPMZ950UPEYL | Datasheet plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ950UPEYL

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	2.7 W
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMZ950UPE Series

20 V, P-channel Trench MOSFET

Part	Vgs (Max) [Max]	FET Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Nexperia USA Inc. PMZ950UPEYL	8 V	P-Channel	MOSFET (Metal Oxide)	1.4 Ohm	2.7 W	360 mW	43 pF	SOT-883	500 mA	SC-101 SOT-883	20 V	1.2 V	4.5 V	150 °C	-55 °C	Surface Mount	2.1 nC	950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8839	$ 0.38
		359484	$ 0.11
TME	N/A	1	$ 16.34
		3	$ 15.36

Description

General part information

PMZ950UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.