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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Vgs (Max) [Max] | FET Type | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 8 V | P-Channel | MOSFET (Metal Oxide) | 1.4 Ohm | 2.7 W | 360 mW | 43 pF | SOT-883 | 500 mA | SC-101 SOT-883 | 20 V | 1.2 V | 4.5 V | 150 °C | -55 °C | Surface Mount | 2.1 nC | 950 mV |