Discrete Semiconductor Products
STGB20N40LZ
ObsoleteSTMicroelectronics
AUTOMOTIVE-GRADE 390 V INTERNALLY CLAMPED IGBT ESCIS 300 MJ
Discrete Semiconductor Products
STGB20N40LZ
ObsoleteSTMicroelectronics
AUTOMOTIVE-GRADE 390 V INTERNALLY CLAMPED IGBT ESCIS 300 MJ
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB20N40LZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 24 nC |
| Grade | Automotive |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 150 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-263 (D2PAK) |
| Td (on/off) @ 25°C | 4.3 µs, 700 ns |
| Test Condition | 5 V, 300 V, 10 A, 1 kOhm |
| Vce(on) (Max) @ Vge, Ic [Max] | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 390 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.20 | |
Description
General part information
STGB20N40LZ Series
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
Documents
Technical documentation and resources