Discrete Semiconductor Products

SSM3K72KCT,L3F

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-883(CST3)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-883(CST3)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K72KCT,L3F

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-323F(UFM)

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Operating Temperature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]
Toshiba Semiconductor and Storage SSM3K36TU,LF	5 V	1.5 V	46 pF	Surface Mount	MOSFET (Metal Oxide)	UFM	1 V	N-Channel	150 °C	630 mOhm	1.23 nC	20 V	10 V	500 mA
Toshiba Semiconductor and Storage SSM3K36FS,LF	5 V	1.5 V	46 pF	Surface Mount	MOSFET (Metal Oxide)	SSM	1 V	N-Channel	150 °C	630 mOhm	1.23 nC	20 V	10 V	500 mA	SC-75 SOT-416	150 mW
Toshiba Semiconductor and Storage SSM3K72KCT,L3F			40 pF	Surface Mount	MOSFET (Metal Oxide)	CST3	2.1 V	N-Channel		1.5 Ohm	0.6 nC	60 V	20 V	400 mA	SC-101 SOT-883		500 mW	4.5 V 10 V	150 °C	-55 °C
Toshiba Semiconductor and Storage SSM3K36MFV,L3F	5 V	1.5 V	46 pF	Surface Mount	MOSFET (Metal Oxide)	VESM	1 V	N-Channel	150 °C	630 mOhm	1.23 nC	20 V	10 V	500 mA	SOT-723	150 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-323F(UFM)

Technical documentation and resources