High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-323F(UFM)
| Part | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | FET Type | Operating Temperature | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 5 V | 1.5 V | 46 pF | Surface Mount | MOSFET (Metal Oxide) | UFM | 1 V | N-Channel | 150 °C | 630 mOhm | 1.23 nC | 20 V | 10 V | 500 mA | ||||||
 Toshiba Semiconductor and Storage | 5 V | 1.5 V | 46 pF | Surface Mount | MOSFET (Metal Oxide) | SSM | 1 V | N-Channel | 150 °C | 630 mOhm | 1.23 nC | 20 V | 10 V | 500 mA | SC-75 SOT-416 | 150 mW | ||||
 Toshiba Semiconductor and Storage | 40 pF | Surface Mount | MOSFET (Metal Oxide) | CST3 | 2.1 V | N-Channel | 1.5 Ohm | 0.6 nC | 60 V | 20 V | 400 mA | SC-101 SOT-883 | 500 mW | 4.5 V 10 V | 150 °C | -55 °C | ||||
 Toshiba Semiconductor and Storage | 5 V | 1.5 V | 46 pF | Surface Mount | MOSFET (Metal Oxide) | VESM | 1 V | N-Channel | 150 °C | 630 mOhm | 1.23 nC | 20 V | 10 V | 500 mA | SOT-723 | 150 mW |