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TO-263AB
Discrete Semiconductor Products

IRF9Z34SPBF

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TO-263AB
Discrete Semiconductor Products

IRF9Z34SPBF

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9Z34SPBF
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds1100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.7 W, 88 W
Rds On (Max) @ Id, Vgs140 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.92
50$ 1.55
100$ 1.27
500$ 1.08
1000$ 0.91
2000$ 0.87
5000$ 0.83
10000$ 0.81

Description

General part information

IRF9Z34 Series

P-Channel 60 V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources