Discrete Semiconductor Products

IRF9Z34PBF-BE3

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MOSFET P-CH 60V 18A TO220AB

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Discrete Semiconductor Products

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MOSFET P-CH 60V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9Z34PBF-BE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRF9Z34SPBF	P-Channel	140 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 A	-55 °C	175 ░C	TO-263 (D2PAK)	3.7 W 88 W	34 nC	60 V	10 V	1100 pF	Surface Mount	20 V	MOSFET (Metal Oxide)	4 V
Vishay General Semiconductor - Diodes Division IRF9Z34STRLPBF	P-Channel	140 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 A	-55 °C	175 ░C	TO-263 (D2PAK)	3.7 W 88 W	34 nC	60 V	10 V	1100 pF	Surface Mount	20 V	MOSFET (Metal Oxide)	4 V
Vishay General Semiconductor - Diodes Division IRF9Z34PBF-BE3	P-Channel	140 mOhm	TO-220-3	18 A	-55 °C	175 ░C	TO-220AB		34 nC	60 V		1100 pF	Through Hole	20 V	MOSFET (Metal Oxide)	4 V	88 W

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General part information

P-Channel 60 V 18A (Tc) 88W (Tc) Through Hole TO-220AB

Technical documentation and resources