Discrete Semiconductor Products

SIHB16N50C-E3

LTB

MOSFET N-CH 500V 16A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 16A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB16N50C-E3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIHB16N50C-E3	380 mOhm	5 V	68 nC	-55 °C	150 °C	10 V	30 V	250 W	MOSFET (Metal Oxide)	TO-263 (D2PAK)	500 V	Surface Mount	1900 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 3.21

General part information

N-Channel 500 V 16A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources