SIHB16 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 16A D2PAK
| Part | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) [Max] | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 380 mOhm | 5 V | 68 nC | -55 °C | 150 °C | 10 V | 30 V | 250 W | MOSFET (Metal Oxide) | TO-263 (D2PAK) | 500 V | Surface Mount | 1900 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 16 A |