Discrete Semiconductor Products

STE48NM60

Obsolete

MOSFET N-CH 650V 48A ISOTOP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 48A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	STE48NM60

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	134 nC
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Chassis Mount
Operating Temperature	150 °C
Package / Case	ISOTOP
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Power Dissipation (Max)
STMicroelectronics STE48NM60	110 mOhm	3800 pF	ISOTOP	MOSFET (Metal Oxide)	ISOTOP®	N-Channel	650 V	48 A	5 V	150 °C	134 nC	10 V	30 V	Chassis Mount	450 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 48A (Tc) 450W (Tc) Chassis Mount ISOTOP®

Technical documentation and resources