
Discrete Semiconductor Products
IPA60R380P6XKSA1
ActiveINFINEON
MOSFET TRANSISTOR, N CHANNEL, 10.6 A, 600 V, 0.342 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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Discrete Semiconductor Products
IPA60R380P6XKSA1
ActiveINFINEON
MOSFET TRANSISTOR, N CHANNEL, 10.6 A, 600 V, 0.342 OHM, 10 V, 4 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPA60R380P6XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.6 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 877 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 31 W |
| Rds On (Max) @ Id, Vgs [Max] | 380 mOhm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
| Part | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 10 V | TO-220-3 Full Pack | PG-TO220-FP | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6 A | 150 °C | -55 °C | 32 nC | 380 mOhm | 31 W | 700 pF | Through Hole | 3.5 V | 20 V | ||
INFINEON | 10 V | TO-220-3 Full Pack | PG-TO220-FP | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6 A | 150 °C | -55 °C | 380 mOhm | 31 W | Through Hole | 4.5 V | 20 V | 877 pF | 19 nC | ||
INFINEON | 10 V | TO-220-3 Full Pack | PG-TO220-FP | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6 A | 150 °C | -55 °C | 32 nC | 380 mOhm | 31 W | 700 pF | Through Hole | 3.5 V | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPA60R380 Series
InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Documents
Technical documentation and resources