Specification	SSM6N7002BFE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	17 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	2.1 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.1 V

SSM6N7002 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)

Part	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Configuration	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Grade	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6N7002BFE,LM	Surface Mount	60 V	SOT-563 SOT-666	ES6	17 pF	Logic Level Gate	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2.1 Ohm	150 °C	3.1 V	200 mA
Toshiba Semiconductor and Storage SSM6N7002KFU,LXH	Surface Mount	60 V	6-TSSOP SC-88 SOT-363	US6			2 N-Channel (Dual)	MOSFET (Metal Oxide)	1.5 Ohm	150 °C	2.1 V	300 mA	Automotive	0.6 nC	40 pF	AEC-Q101	285 mW
Toshiba Semiconductor and Storage SSM6N7002KFU,LF	Surface Mount	60 V	6-TSSOP SC-88 SOT-363	US6			2 N-Channel (Dual)	MOSFET (Metal Oxide)	1.5 Ohm	150 °C	2.1 V	300 mA		0.6 nC	40 pF		285 mW
Toshiba Semiconductor and Storage SSM6N7002BFU,LF	Surface Mount	60 V	6-TSSOP SC-88 SOT-363	US6	17 pF	Logic Level Gate	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2.1 Ohm	150 °C	3.1 V	200 mA					300 mW
Toshiba Semiconductor and Storage SSM6N7002BFU(T5L,F	Surface Mount	60 V	6-TSSOP SC-88 SOT-363	US6	17 pF	Logic Level Gate	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2.1 Ohm	150 °C	3.1 V	200 mA					300 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)

Technical documentation and resources