High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Configuration | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Grade | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Surface Mount | 60 V | SOT-563 SOT-666 | ES6 | 17 pF | Logic Level Gate | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 2.1 Ohm | 150 °C | 3.1 V | 200 mA | |||||
 Toshiba Semiconductor and Storage | Surface Mount | 60 V | 6-TSSOP SC-88 SOT-363 | US6 | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 1.5 Ohm | 150 °C | 2.1 V | 300 mA | Automotive | 0.6 nC | 40 pF | AEC-Q101 | 285 mW | ||
 Toshiba Semiconductor and Storage | Surface Mount | 60 V | 6-TSSOP SC-88 SOT-363 | US6 | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 1.5 Ohm | 150 °C | 2.1 V | 300 mA | 0.6 nC | 40 pF | 285 mW | ||||
 Toshiba Semiconductor and Storage | Surface Mount | 60 V | 6-TSSOP SC-88 SOT-363 | US6 | 17 pF | Logic Level Gate | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 2.1 Ohm | 150 °C | 3.1 V | 200 mA | 300 mW | ||||
Toshiba Semiconductor and Storage | Surface Mount | 60 V | 6-TSSOP SC-88 SOT-363 | US6 | 17 pF | Logic Level Gate | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 2.1 Ohm | 150 °C | 3.1 V | 200 mA | 300 mW |