Discrete Semiconductor Products

MJD31CAJ

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MJD31CA/SOT428/DPAK

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Discrete Semiconductor Products

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MJD31CA/SOT428/DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MJD31CAJ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.6 W
Qualification	AEC-Q101
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

100 V, 3 A NPN high power bipolar transistor

Part	Current - Collector (Ic) (Max) [Max]	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Grade
Freescale Semiconductor - NXP MJD31CAJ	3 A	AEC-Q101	100 V	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	NPN	25 hFE	1.2 V	1.6 W	3 MHz	DPAK	Surface Mount	1 µA	Automotive
Freescale Semiconductor - NXP MJD31CH-QJ	3 A	AEC-Q101	100 V	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	NPN	120	1.2 V	1.6 W	3 MHz	DPAK	Surface Mount	1 µA	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources