100 V, 3 A NPN high power bipolar transistor
100 V, 3 A NPN high power bipolar transistor
100 V, 3 A NPN high power bipolar transistor
| Part | Current - Collector (Ic) (Max) [Max] | Qualification | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Package / Case | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Frequency - Transition | Supplier Device Package | Mounting Type | Current - Collector Cutoff (Max) [Max] | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 3 A | AEC-Q101 | 100 V | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | NPN | 25 hFE | 1.2 V | 1.6 W | 3 MHz | DPAK | Surface Mount | 1 µA | Automotive |
Freescale Semiconductor - NXP | 3 A | AEC-Q101 | 100 V | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | NPN | 120 | 1.2 V | 1.6 W | 3 MHz | DPAK | Surface Mount | 1 µA | Automotive |