Discrete Semiconductor Products

TSM70N600ACL X0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 700V 8A TO262S

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Discrete Semiconductor Products

TSM70N600ACL X0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 700V 8A TO262S

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TSM70N600ACL X0G

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.6 nC
Input Capacitance (Ciss) (Max) @ Vds	743 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-262S (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

TSM70 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Taiwan Semiconductor Corporation TSM70N600ACL X0G	12.6 nC	MOSFET (Metal Oxide)	TO-262S (I2PAK)	83 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Through Hole	4 V
Taiwan Semiconductor Corporation TSM70NB1R4CP		MOSFET (Metal Oxide)	TO-252 (DPAK)		700 V	-55 °C	150 °C	10 V	N-Channel	3 A	1.4 Ohm	30 V	317 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.4 nC	28 W
Taiwan Semiconductor Corporation TSM70N750CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)		700 V	-55 °C	150 °C	10 V	N-Channel	6 A	750 mOhm	30 V		Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10.7 nC	62.5 W	555 pF
Taiwan Semiconductor Corporation TSM70N900CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)		700 V	-55 °C	150 °C	10 V	N-Channel	4.5 A	900 mOhm	30 V	482 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.7 nC	50 W
Taiwan Semiconductor Corporation TSM70N600CI	12.6 nC	MOSFET (Metal Oxide)	ITO-220	32 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Through Hole	4 V	TO-220-3 Full Pack Isolated Tab
Taiwan Semiconductor Corporation TSM70N1R4CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)	38 W	700 V	-55 °C	150 °C	10 V	N-Channel	3.3 A	1.4 Ohm	30 V		Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.7 nC		370 pF
Taiwan Semiconductor Corporation TSM70N600ACL	12.6 nC	MOSFET (Metal Oxide)	TO-262S (I2PAK SL)	83 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Through Hole	4 V
Taiwan Semiconductor Corporation TSM70N600CP ROG	12.6 nC	MOSFET (Metal Oxide)	TO-252 (DPAK)	83 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Taiwan Semiconductor Corporation TSM70N380CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)	125 W	700 V	-55 °C	150 °C	10 V	N-Channel	11 A	380 mOhm	30 V	981 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	18.8 nC
Taiwan Semiconductor Corporation TSM70N380CP		MOSFET (Metal Oxide)	TO-252 (DPAK)	125 W	700 V	-55 °C	150 °C	10 V	N-Channel	11 A	380 mOhm	30 V	981 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	18.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

TSM70 Series

N-Channel 700 V 8A (Tc) 83W (Tc) Through Hole TO-262S (I2PAK)

Documents

Technical documentation and resources

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