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STMICROELECTRONICS STF13N60DM2
Discrete Semiconductor Products

STF15N80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.300 OHM TYP., 14 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

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STMICROELECTRONICS STF13N60DM2
Discrete Semiconductor Products

STF15N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.300 OHM TYP., 14 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF15N80K5
Current - Continuous Drain (Id) @ 25°C14 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1100 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs375 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 4.42
10$ 4.12
50$ 2.68
200$ 2.51
500$ 2.20
DigikeyN/A 0$ 4.48
NewarkEach 1$ 5.38
10$ 4.65
25$ 3.93
50$ 3.20
100$ 2.97
250$ 2.80
500$ 2.62

Description

General part information

STF15N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources