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MICROCHIP 11AA02UID-I/SN
Discrete Semiconductor Products

FDS8447

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 12.8 A, 0.009 OHM, SOIC, SURFACE MOUNT

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MICROCHIP 11AA02UID-I/SN
Discrete Semiconductor Products

FDS8447

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 12.8 A, 0.009 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS8447
Current - Continuous Drain (Id) @ 25°C12.8 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds2600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs10.5 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.01
10$ 1.28
100$ 0.87
500$ 0.69
1000$ 0.63
Digi-Reel® 1$ 2.01
10$ 1.28
100$ 0.87
500$ 0.69
1000$ 0.63
Tape & Reel (TR) 2500$ 0.57
5000$ 0.55
ON SemiconductorN/A 1$ 0.23

Description

General part information

FDS8447 Series

This single N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.