FDS8447 Series

N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS8447	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	Surface Mount	12.8 A	40 V	-55 °C	150 °C	20 V	2600 pF	8-SOIC	2.5 W	10.5 mOhm	N-Channel	10 V 49 nC	8-SOIC	3.9 mm	0.154 in

Catalog

N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ

Key Features

• Max rDS(on)= 10.5 mΩ at VGS= 10 V, ID= 12.8 A

• Max rDS(on)= 12.3 mΩ at VGS= 4.5 V, ID= 11.4 A

• Low gate charge

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• RoHS compliant

Description

This single N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.