Discrete Semiconductor Products

STP9N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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Documents TN1224 +25

Discrete Semiconductor Products

STP9N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

Documents TN1224 +25

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP9N60M2

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	320 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	780 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP9N60M2 Series

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220 package

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
STMicroelectronics STP9N60M2	600 V	10 nC	TO-220	N-Channel	Through Hole	4 V	150 °C	60 W	MOSFET (Metal Oxide)	320 pF	5.5 A	TO-220-3	780 mOhm	10 V	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.91
Mouser	N/A	2000	$ 0.52
		5000	$ 0.50
		10000	$ 0.49
Newark	Each	1	$ 0.97
		10	$ 0.92
		100	$ 0.85
		500	$ 0.82
		1000	$ 0.79
		3000	$ 0.78
		10000	$ 0.77

Description

General part information

STP9N60M2 Series

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.