ADPA1116ACGZN
Active0.3 GHZ TO 6 GHZ, 39.5 DBM, GAN POWER AMPLIFIER
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ADPA1116ACGZN
Active0.3 GHZ TO 6 GHZ, 39.5 DBM, GAN POWER AMPLIFIER
Technical Specifications
Parameters and characteristics for this part
| Specification | ADPA1116ACGZN |
|---|---|
| Current - Supply | 300 mA |
| Frequency (Max) | 6 GHz |
| Frequency (Min) | 300 MHz |
| Gain | 33 dB |
| Mounting Type | Surface Mount |
| Package / Case | CSP, 32-LFQFN Exposed Pad |
| Package Length | 5 mm |
| Package Name | 32-LFCSP-CAV |
| Package Width | 5 mm |
| RF Type | Radar |
| Test Frequency (Maximum) | 5 GHz |
| Test Frequency (Minimum) | 500 MHz |
| Voltage - Supply | 28 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 477.07 | <1d |
| 10 | $ 415.62 | |||
CAD
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Description
General part information
ADPA1116 Series
The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a saturated output power (POUT) of 39.5 dBm, power added efficiency (PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage of 28 V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin.The ADPA1116 is fabricated on a gallium nitride (GaN) process, is housed in a 32-lead lead frame chip scale package, premolded cavity [LFCSP_CAV], and is specified for operation from −40°C to +85°C.
Documents
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