Discrete Semiconductor Products
PHPT60410NYX
ActiveNexperia USA Inc.
40 V, 10 A NPN HIGH POWER BIPOLAR TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
PHPT60410NYX
ActiveNexperia USA Inc.
40 V, 10 A NPN HIGH POWER BIPOLAR TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PHPT60410NYX |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 230 |
| Frequency - Transition | 128 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | SC-100, SOT-669 |
| Power - Max [Max] | 1.3 W |
| Qualification | AEC-Q100 |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 460 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1108 | $ 0.27 | |
| 1351 | $ 0.22 | |||
| N/A | 1354 | $ 1.31 | ||
| 13684 | $ 0.63 | |||
Description
General part information
PHPT60410NY Series
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
Documents
Technical documentation and resources