Catalog
40 V, 10 A NPN high power bipolar transistor
Description
AI
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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40 V, 10 A NPN high power bipolar transistor
40 V, 10 A NPN high power bipolar transistor
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Frequency - Transition | Supplier Device Package | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Grade | Current - Collector Cutoff (Max) [Max] | Transistor Type | Qualification | Operating Temperature | Mounting Type | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 40 V | 1.3 W | 128 MHz | LFPAK56 Power-SO8 | SC-100 SOT-669 | 230 | Automotive | 100 nA | NPN | AEC-Q100 | 175 °C | Surface Mount | 460 mV |