Discrete Semiconductor Products

SISH617DN-T1-GE3

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MOSFET P-CH 30V 13.9A/35A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 30V 13.9A/35A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISH617DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	13.9 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	12.3 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case
Vishay General Semiconductor - Diodes Division SISH617DN-T1-GE3	13.9 A 35 A	25 V	12.3 mOhm	-55 °C	150 °C	3.7 W 52 W	59 nC	1800 pF	P-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2.5 V	Surface Mount	30 V	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources