SISH617 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 13.9A/35A PPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 13.9 A 35 A | 25 V | 12.3 mOhm | -55 °C | 150 °C | 3.7 W 52 W | 59 nC | 1800 pF | P-Channel | MOSFET (Metal Oxide) | 4.5 V 10 V | 2.5 V | Surface Mount | 30 V | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |