Discrete Semiconductor Products

UPS160/TR7

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DIODE SCHOTTKY 1.0A, 60V, VF=0.60V POWERMITE T/R

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 1.0A, 60V, VF=0.60V POWERMITE T/R

Technical Specifications

Parameters and characteristics for this part

Specification	UPS160/TR7

Capacitance @ Vr, F	55 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-216AA
Speed	200 mA, 500 ns
Supplier Device Package	Powermite
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Diode Schottky 1.0A, 60V, VF=0.60V PowerMite T/R

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Capacitance @ Vr, F	Package / Case	Supplier Device Package	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If
Microchip Technology UPS160E3/TR13	100 µA	1 A	60 V	Surface Mount	200 mA 500 ns	55 pF	DO-216AA	Powermite	Schottky	-55 °C	125 °C	600 mV
Microchip Technology UPS160/TR7	100 µA	1 A	60 V	Surface Mount	200 mA 500 ns	55 pF	DO-216AA	Powermite	Schottky	-55 °C	125 °C	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low profile package height. Low thermal resistance

Technical documentation and resources

No documents available