Discrete Semiconductor Products

IRG7PSH50UDPBF

Obsolete

IRG7PSH50 - DISCRETE IGBT WITH A

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Discrete Semiconductor Products

Obsolete

IRG7PSH50 - DISCRETE IGBT WITH A

Technical Specifications

Parameters and characteristics for this part

Specification	IRG7PSH50UDPBF

Current - Collector Pulsed (Icm)	150 A
Gate Charge	440 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-274AA
Power - Max [Max]	462 W
Reverse Recovery Time (trr)	190 ns
Supplier Device Package	PG-TO274-3-903
Switching Energy	3.6 mJ, 2.2 mJ
Td (on/off) @ 25°C	430 ns, 35 ns
Test Condition	50 A, 600 V, 5 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Pulsed (Icm)	Test Condition	Package / Case	Switching Energy	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Power - Max [Max]	Td (on/off) @ 25°C	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
INFINEON IRG7PSH50UDPBF	150 A	5 Ohm 15 V 50 A 600 V	TO-274AA	2.2 mJ 3.6 mJ	PG-TO274-3-903	2 V	1200 V	440 nC	462 W	35 ns 430 ns	Trench	150 °C	-55 °C	190 ns	Through Hole
INFINEON IRG7PSH50UDPBF	150 A	5 Ohm 15 V 50 A 600 V	TO-274AA	2.2 mJ 3.6 mJ	PG-TO274-3-903	2 V	1200 V	440 nC	462 W	35 ns 430 ns	Trench	150 °C	-55 °C	190 ns	Through Hole
INFINEON IRG7PSH73K10PBF	225 A	4.7 Ohm 15 V 75 A 600 V	TO-274AA		SUPER-247™ (TO-274AA)	2.3 V	1200 V	360 nC	1150 W		Trench	175 °C	-55 °C		Through Hole	220 A	63 ns	267 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench 1200 V 116 A 462 W Through Hole PG-TO274-3-903

Technical documentation and resources