Discrete Semiconductor Products

SIA929DJ-T1-GE3

Active

MOSFET 2P-CH 30V 4.5A PPAK8X8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2P-CH 30V 4.5A PPAK8X8

Technical Specifications

Parameters and characteristics for this part

Specification	SIA929DJ-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	575 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	7.8 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIA929DJ-T1-GE3	4.5 A	64 mOhm	1.1 V	-55 °C	150 °C	21 nC	Logic Level Gate	2 P-Channel	575 pF	PowerPAK® SC-70-6 Dual	MOSFET (Metal Oxide)	Surface Mount	7.8 W	30 V	PowerPAK® SC-70-6 Dual

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources