SIA929 Series

Catalog

MOSFET 2P-CH 30V 4.5A PPAK8X8

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIA929DJ-T1-GE3	4.5 A	64 mOhm	1.1 V	-55 °C	150 °C	21 nC	Logic Level Gate	2 P-Channel	575 pF	PowerPAK® SC-70-6 Dual	MOSFET (Metal Oxide)	Surface Mount	7.8 W	30 V	PowerPAK® SC-70-6 Dual