Specification	STD2NK100Z

Current - Continuous Drain (Id) @ 25°C	1.85 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds	499 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	8.5 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STD2NK100Z Series

N-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in a DPAK package

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)
STMicroelectronics STD2NK100Z	4.5 V	30 V	MOSFET (Metal Oxide)	499 pF	150 °C	-55 °C	1.85 A	70 W	N-Channel	8.5 Ohm	10 V	DPAK	16 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1000 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4698	$ 2.90
Newark	Each (Supplied on Cut Tape)	1	$ 2.22
		10	$ 1.80
		25	$ 1.57
		50	$ 1.38
		100	$ 1.18
		250	$ 1.03
		500	$ 0.83
		1000	$ 0.78

Description

General part information

STD2NK100Z Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.