Discrete Semiconductor Products

SIA443DJ-T1-GE3

Obsolete

MOSFET P-CH 20V 9A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 9A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA443DJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	750 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.3 W, 15 W
Rds On (Max)	45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Power Dissipation (Max)	Gate Charge (Max)	FET Type	Rds On (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Package / Case
Vishay Dale SIA443DJ-T1-GE3	-55 °C	150 °C	1 V	PowerPAK® SC-70-6	3.3 W 15 W	25 nC	P-Channel	45 mOhm	8 V	4.5 V	1.8 V	Surface Mount	9 A	750 pF	MOSFET (Metal Oxide)	20 V	PowerPAK® SC-70-6
Vishay Dale SIA443DJ-T1-E3	-55 °C	150 °C	1 V	PowerPAK® SC-70-6	3.3 W 15 W	25 nC	P-Channel	45 mOhm	8 V	4.5 V	1.8 V	Surface Mount	9 A	750 pF	MOSFET (Metal Oxide)	20 V	PowerPAK® SC-70-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 9A (Tc) 3.3W (Ta), 15W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources

No documents available