Discrete Semiconductor Products

SIA443DJ-T1-E3

Obsolete

MOSFET P-CH 20V 9A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 9A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA443DJ-T1-E3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	15 W, 3.3 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIA443DJ-T1-E3	8 V	PowerPAK® SC-70-6	P-Channel	1.8 V 4.5 V	750 pF	1 V	25 nC	20 V	3.3 W 15 W	MOSFET (Metal Oxide)	9 A	Surface Mount	PowerPAK® SC-70-6	45 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 9A (Tc) 3.3W (Ta), 15W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources

No documents available