IMW120R220M1HXKSA1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 13 A, 1.2 KV, 0.286 OHM, TO-247
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IMW120R220M1HXKSA1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 13 A, 1.2 KV, 0.286 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | IMW120R220M1HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 289 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) @ Id, Vgs | 286 mOhm |
| Supplier Device Package | PG-TO247-3-41 |
| Vgs (Max) | -7 V, 23 V |
| Vgs(th) (Max) @ Id | 5.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IMW120RXM1H Series
TheCoolSiC™1200 V, 220 mΩSiC MOSFETin TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Documents
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