IMW120RXM1H Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 19 A, 1.2 KV, 0.14 OHM, TO-247
| Part | Gate Charge (Qg) (Max) @ Vgs | FET Type | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 13 nC | N-Channel | Through Hole | TO-247-3 | 182 mOhm | 15 V 18 V | 94 W | 5.7 V | 175 °C | -55 °C | PG-TO247-3-41 | -7 V 23 V | 1.2 kV | 454 pF | 19 A | |
 INFINEON | N-Channel | Through Hole | TO-247-3 | 286 mOhm | 15 V 18 V | 75 W | 5.7 V | 175 °C | -55 °C | PG-TO247-3-41 | -7 V 23 V | 1.2 kV | 289 pF | 13 A | 8.5 nC |