Discrete Semiconductor Products

APT8DQ60KG

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DIODE GEN PURP 600V 8A TO220

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	APT8DQ60KG

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	19 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220 [K]
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.4 V

Part	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)
Microchip Technology APT8DQ60KG	200 mA 500 ns	8 A	175 ░C	-55 C	TO-220 [K]	2.4 V	Through Hole	25 µA	TO-220-3	600 V	Standard	19 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole TO-220 [K]

Technical documentation and resources