Discrete Semiconductor Products

SI1070X-T1-E3

Obsolete

MOSFET N-CH 30V 1.2A SC89-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 1.2A SC89-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1070X-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	236 mW
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.55 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1070X-T1-E3	SC-89 (SOT-563F)	1.2 A	236 mW	8.3 nC	12 V	1.55 V	385 pF	30 V	Surface Mount	SOT-563 SOT-666	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	2.5 V 4.5 V	99 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Technical documentation and resources